Science Daily

Scientists built a transistor that could leave silicon in the dust

Shrinking silicon transistors have reached their physical limits, but a team from the University of Tokyo is rewriting the rules. They've created a cutting-edge transistor using gallium-doped indium ...
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Chinese researchers develop silicon-free transistor technology, claimed to be fastest and most efficient ever - here's what we know

Peking University transistor could outperform Intel, TSMC, and Samsung’s top silicon chips Full gate coverage boosts speed and cuts energy use in breakthrough Chinese transistor design China may have ...
AOL

Groundbreaking crystal oxide transistors are faster, smaller and more reliable than silicon

Shrinking computers, faster phones, and smarter gadgets all rely on one tiny component: the transistor. Invented in the 20th century, it’s what powers nearly every modern electronic device.
ExtremeTech

Chinese Researchers Say They Have a Fast, Silicon-Free Transistor

If the claim is accurate, it would mean that China has bleeding-edge tech that could rival chips from Intel and TSMC. Share on Facebook (opens in a new window) Share on X (opens in a new window) Share ...
TechSpot

MIT researchers bond gallium nitride transistors to silicon for faster next-gen wireless devices

What just happened? A team of researchers at MIT, in collaboration with Georgia Tech and the Air Force Research Laboratory, has developed a new method for integrating gallium nitride (GaN) transistors ...
Science Daily

Pioneering beyond-silicon technology via residue-free field effect transistors

Beyond-silicon technology demands ultra-high-performance field-effect transistors (FETs). Transition metal dichalcogenides (TMDs) provide an ideal material platform, but the device performances such ...